SHORT COMMUNICATION: Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SicxNy:H(n) alloys

Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon-rich films yielded effective surface recombinatio...

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Published inProgress in photovoltaics Vol. 16; no. 2; pp. 123 - 127
Main Authors Ferre, R, Orpella, A, Munoz, D, Martin, I, Recart, F, Voz, C, Puigdollers, J, Cabarrocas, P Roca i, Alcubilla, R
Format Journal Article
LanguageEnglish
Published 01.03.2008
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Summary:Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon-rich films yielded effective surface recombination velocities at 1 sun-illumination as low as 3cms-1 and 2cms-1 on 1cm p- and n-type crystalline silicon substrates, respectively. In order to use them as anti-reflection coating, we increased alternatively either the carbon or nitrogen content of these films. Also, a combination of passivation and antireflective films was analyzed. Finally, we explored the passivation stability under high-temperature steps.
Bibliography:ObjectType-Article-2
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ISSN:1062-7995
1099-159X
DOI:10.1002/pip.802