CHARACTERIZATION OF METALLIC CONTACTS IN FINE FILMS OF SnO2: Er GOTTEN OF PRECURSORY VISCOUS SOLUTIONS

Er-doped SnO2 thin films have been deposited by dip-coating sol-gel technique. Two different kind of metals are used as electrodes on these films: Sn and In, which are compared concerning current-voltage characteristics and possible deviation from ohmic behavior. Structural characterization of these...

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Published inRevista Brasileira de Aplicacoes de Vacuo (Brazilian Journal of Vacuum Applications) Vol. 25; no. 2; pp. 83 - 88
Main Authors Ravaro, L P, Maciel Jr, J L B, De Morais, E A, Scalvi, L V A
Format Magazine Article
LanguagePortuguese
Published 01.01.2006
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Summary:Er-doped SnO2 thin films have been deposited by dip-coating sol-gel technique. Two different kind of metals are used as electrodes on these films: Sn and In, which are compared concerning current-voltage characteristics and possible deviation from ohmic behavior. Structural characterization of these contacts reveals the possibility of oxidation of Sn electrode during thermal annealing, that does not occur with the In electrode. However, avoiding the oxidation, the Sn contact has superior performance compared to In under vacuum, at room temperature. Depending on Er concentration and magnitude of applied potential, current-voltage curve of samples metalized with both metals may be linear or non-linear. Deviations from ohmic behavior take place due to the influence of charge trapping centers of Er3' , which is an acceptor in the SnO2 matrix.
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ISSN:0101-7659