Edge-dimer row - The reason of three-bilayer steps and islands stability on Si(111)-7X7

• Published in: Surface science Vol. 600; no. 15; pp. 3079 - 3086
• Main Authors: Neizvestny, I G, Romanyuk, K N, Shwartz, N L, Teys, S A, Yanovitskaya, Z Sh, Zverev, A V
• Format: Journal Article
• Language: English
• Published: 01.08.2006
• ISSN: 0039-6028
• DOI: 10.1016/j.susc.2006.05.055

A hypothesis of perpendicular dimer row formation along three-bilayer (3BL) step was suggested. The hypothesis, explains the stability of 3BL steps on the vicinal Si(111) surface deflected in direction as well as the limitation of Ge and Si island height by 3BL at the initial nucleation stages on Si(111) surface. The detailed examinations of STM images of 3BL steps were carried out. New peculiarities of atomic structure of 3BL single step on Si(111) and 3BL steps on Si(557) surfaces were revealed. The results of STM images examination verify the hypothesis of perpendicular dimer row formation along the boundary of the 3BL step.