Negative differential resistance of 2D electron gases in 0.1 mum pseudomorphic HEMTs

• Published in: Electrochemical and solid-state letters Vol. 7; no. 11; pp. G290 - G293
• Main Authors: Kim, Sam-Dong, Oh, Jung-Hun, Han, Hyo-Jong, Lim, Byeong-Ok, Rhee, Jin-Koo, Sul, Woo-Suk
• Format: Journal Article
• Language: English
• Published: 01.01.2004

We examined a negative differential resistance (NDR) in 2D electron gas (2-DEG) of the 0.1 (mum psuedomorphic high electron mobility transistors (HEMTs) by adopting two types of the gate structures. A single gate structure exhibits a clear 2-DEG NDR effect at a drain voltage of ~3.7 V and produces a...