Negative differential resistance of 2D electron gases in 0.1 mum pseudomorphic HEMTs

We examined a negative differential resistance (NDR) in 2D electron gas (2-DEG) of the 0.1 (mum psuedomorphic high electron mobility transistors (HEMTs) by adopting two types of the gate structures. A single gate structure exhibits a clear 2-DEG NDR effect at a drain voltage of ~3.7 V and produces a...

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Published inElectrochemical and solid-state letters Vol. 7; no. 11; pp. G290 - G293
Main Authors Kim, Sam-Dong, Oh, Jung-Hun, Han, Hyo-Jong, Lim, Byeong-Ok, Rhee, Jin-Koo, Sul, Woo-Suk
Format Journal Article
LanguageEnglish
Published 01.01.2004
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Summary:We examined a negative differential resistance (NDR) in 2D electron gas (2-DEG) of the 0.1 (mum psuedomorphic high electron mobility transistors (HEMTs) by adopting two types of the gate structures. A single gate structure exhibits a clear 2-DEG NDR effect at a drain voltage of ~3.7 V and produces a ~ 10 times greater electric field (~30 kV/cm) for the NDR than that of the bulk InGaAs semiconductors. The triple gate structure suppresses the NDR effect at the same bias condition but gives rise to the NDR recovery at a positive drain-control gate bias while significantly decreasing the break down voltage
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:1099-0062
DOI:10.1149/1.1808111