Comparative studies of 8-doped In0.45Al0.55As/In0.53Ga0.47As/GaAs Metamorphic HEMTs with Au, Ti/Au, Ni/Au, and Pt/Au Gates

This work comprehensively investigates device characteristics of a 5-doped In0.45Al0.55As/In0.53Ga0.47As/GaAs metamorphic high-electron-mobility transistors (HEMTs) with different gate alloys, including Ti/Au, Ni/Au, Pt/Au, and Au. The impact-ionization-related kink effects on the device performance...

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Published inJournal of the Electrochemical Society Vol. 153; no. 11; pp. G996 - G1000
Main Authors Su, Ke-Hua, Hsu, Wei-Chou, Lee, Ching-Sung, Chen, I Liang, Chen, Yeong-Jia, Wu, Chang-Luen
Format Journal Article
LanguageEnglish
Published 01.01.2006
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Summary:This work comprehensively investigates device characteristics of a 5-doped In0.45Al0.55As/In0.53Ga0.47As/GaAs metamorphic high-electron-mobility transistors (HEMTs) with different gate alloys, including Ti/Au, Ni/Au, Pt/Au, and Au. The impact-ionization-related kink effects on the device performances are found to be significantly improved by depositing the high-barrier-height gate alloys. As compared to conventional Au-gated metamorphic HEMTs, the devices with Ti/Au, Ni/Au, and Pt/Au gate alloys have shown superior low-noise, high-power, and high-linearity gain performances, respectively.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0013-4651
DOI:10.1149/1.2349286