Laser diode of 350.9nm wavelength grown on sapphire substrate by MOVPE

We have developed GaN/AlGaN multi-quantum-well (MQW) UV-laser diode (UV-LD) grown on sapphire substrate. The combination of a low-temperature-deposited AlN interlayer technology and lateral seeding epitaxy yielded crack-free and low-dislocation-density AlGaN. The lasing wavelength under pulsed curre...

Full description

Saved in:
Bibliographic Details
Published inJournal of crystal growth Vol. 272; no. 1-4; pp. 270 - 273
Main Authors Iida, Kazuyoshi, Kawashima, Takeshi, Miyazaki, Atsushi, Kasugai, Hideki, Mishima, Syunsuke, Honshio, Akira, Miyake, Yasuto, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Format Journal Article
LanguageEnglish
Published 01.12.2004
Online AccessGet full text

Cover

More Information
Summary:We have developed GaN/AlGaN multi-quantum-well (MQW) UV-laser diode (UV-LD) grown on sapphire substrate. The combination of a low-temperature-deposited AlN interlayer technology and lateral seeding epitaxy yielded crack-free and low-dislocation-density AlGaN. The lasing wavelength under pulsed current injection at room temperature was 350.9nm, which is the shortest wavelength ever reported.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-1
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2004.08.052