1.3 mum high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

• Published in: Physica status solidi. C Vol. 3; no. 3; pp. 631 - 634
• Main Authors: Niu, Zhichuan, Zhang, Shiyong, Ni, Haiqiao, Wu, Donghai, He, Zhenhong, Sun, Zheng, Han, Qin, Wu, Ronghan
• Format: Journal Article
• Language: English
• Published: 01.03.2006

High structural and optical quality 1.3 mum GaInNAs /GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) pea...