1.3 mum high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

High structural and optical quality 1.3 mum GaInNAs /GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) pea...

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Published inPhysica status solidi. C Vol. 3; no. 3; pp. 631 - 634
Main Authors Niu, Zhichuan, Zhang, Shiyong, Ni, Haiqiao, Wu, Donghai, He, Zhenhong, Sun, Zheng, Han, Qin, Wu, Ronghan
Format Journal Article
LanguageEnglish
Published 01.03.2006
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Summary:High structural and optical quality 1.3 mum GaInNAs /GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm/20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellosung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (
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ISSN:1610-1634
DOI:10.1002/pssc.200564103