The performance and reliability of 0.4 micron MOSFET''s with gateoxynitrides grown by rapid thermal processing using mixtures of N(2)O and O(2)

We studied the effect of interfacial nitrogen concentration on device characteristics with gate oxynitrides grown from mixtures of N (2)O and O(2) by rapid thermal processing. The performance and reliability of MOS capacitors fabricated by a four mask process and MOSFET's fabricated by a 0.4 mu...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 41; no. 2; pp. 191 - 197
Main Authors Okada, Y, Tobin, P J, Rushbrook, P, DeHart, W L
Format Journal Article
LanguageEnglish
Published 01.02.1994
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Summary:We studied the effect of interfacial nitrogen concentration on device characteristics with gate oxynitrides grown from mixtures of N (2)O and O(2) by rapid thermal processing. The performance and reliability of MOS capacitors fabricated by a four mask process and MOSFET's fabricated by a 0.4 mum twin-well process were examined. No degradation of the current drive of n- and p-MOSFET's in the linear and the saturation region was observed due to oxynitridation. The reliability of gate dielectrics represented by charge-to-breakdown for substrate injection and hot carrier immunity of n-MOSFET's is improved with increasing interfacial nitrogen concentration
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ObjectType-Feature-1
ISSN:0018-9383
DOI:10.1109/16.277380