Annealing effect on magnetic and electronic properties of polycrystalline Ge(1-x)Mn(x) semiconductors grown by MBE

MBE-grown poly Ge(1-x)Mn(x)/SiO2/(100)Si semiconductor thin films were annealed, and magnetic properties of the annealed semiconductors have been studied. As-grown poly Ge(1-x)Mn(x) semiconductor has p-type carriers and electrical resistivity is in the range of 4.0 x 10 exp -3 to 0.5 x 10 exp -3 ohm...

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Published inJournal of magnetism and magnetic materials Vol. 282; pp. 385 - 388
Main Authors Cho, Young Mi, Yu, Sang Soo, Ihm, Young Eon, Kim, Dojin, Min, Hyojin, Baek, Jong Sung, Kim, Chang Soo, Lee, Byoung Taek
Format Journal Article
LanguageEnglish
Published 01.11.2004
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Summary:MBE-grown poly Ge(1-x)Mn(x)/SiO2/(100)Si semiconductor thin films were annealed, and magnetic properties of the annealed semiconductors have been studied. As-grown poly Ge(1-x)Mn(x) semiconductor has p-type carriers and electrical resistivity is in the range of 4.0 x 10 exp -3 to 0.5 x 10 exp -3 ohm cm at room temperature. The carrier type is not changed during annealing, but the electrical resistivity increases with annealing temperature and time. During annealing Ge3Mn5 ferromagnetic phase transforms into Ge3Mn5 anti-ferromagnetic phase and then the Ge8Mn11 phase is decomposed into Ge, beta-Mn and some unidentified phases.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0304-8853
DOI:10.1016/j.jmmm.2004.04.089