Temperature-dependent characteristics of 1.3-mum AlGaInAs-InP lasers with multiquantum barriers at the guiding layers

Strain-compensated 1.3-mum AlGaInAs-InP multiquantum-well (MQW) lasers with multiquantum barriers at both the n- and p-type guiding layers are comprehensively studied. The laser exhibits a characteristic temperature as high as 95 K and degradation in slope efficiency as low as -1.06 dB in the temper...

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Published inIEEE photonics technology letters Vol. 10; no. 12; pp. 1700 - 1702
Main Authors Pan, Jen-Wei, Chen, Ming-Hong, Chyi, Jen-Inn, Shih, Tien-Tsorng
Format Journal Article
LanguageEnglish
Published 01.12.1998
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Summary:Strain-compensated 1.3-mum AlGaInAs-InP multiquantum-well (MQW) lasers with multiquantum barriers at both the n- and p-type guiding layers are comprehensively studied. The laser exhibits a characteristic temperature as high as 95 K and degradation in slope efficiency as low as -1.06 dB in the temperature range from 25 deg C to 75 deg C. The characteristic temperature of transparency current density is deduced to be 129 K. It is also found that the internal loss increases slowly with temperature, while the temperature dependence of the internal quantum efficiency dominates the degradation of the external quantum efficiency due to the degradation of the stimulated recombination, and significant increase of electron and hole leakage at high temperature
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ISSN:1041-1135
DOI:10.1109/68.730474