Integration of waveguides and photodetectors in SiGe for 1.3 mum operation

The integration of single-mode rib waveguides and photodetectors in silicon using MBE-grown SiGe-layers is reported. Short photodetectors exhibit dark currents below 200 nA at 7 V reverse bias. For the fiber-waveguide-detector coupling an overall quantum efficiency of 11% has been achieved at 7 V re...

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Published inIEEE photonics technology letters Vol. 6; no. 1; pp. 59 - 61
Main Authors Splett, A, Zinke, T, Petermann, K, Kasper, E, Kibbel, H, Herzog, H-J, Presting, H
Format Journal Article
LanguageEnglish
Published 01.01.1994
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Summary:The integration of single-mode rib waveguides and photodetectors in silicon using MBE-grown SiGe-layers is reported. Short photodetectors exhibit dark currents below 200 nA at 7 V reverse bias. For the fiber-waveguide-detector coupling an overall quantum efficiency of 11% has been achieved at 7 V reverse bias for lambda=1.3 mum. The maximum bandwidth is 2 GHz
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:1041-1135
DOI:10.1109/68.265889