Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 mum

In this letter, results from a ridge waveguide laser diode (LD) structure, with three GaInNAs quantum wells (QWs) and GaNAs barriers, are presented. The sample was grown by solid source molecular beam epitaxy with an RF plasma nitrogen source. These devices differ from previously reported GaInNAs QW...

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Published inIEEE photonics technology letters Vol. 14; no. 5; pp. 591 - 593
Main Authors Ha, W, Gambin, V, Wistey, M, Bank, S, Kim, Seongsin, Harris, J S
Format Journal Article
LanguageEnglish
Published 01.05.2002
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Summary:In this letter, results from a ridge waveguide laser diode (LD) structure, with three GaInNAs quantum wells (QWs) and GaNAs barriers, are presented. The sample was grown by solid source molecular beam epitaxy with an RF plasma nitrogen source. These devices differ from previously reported GaInNAs QWs LDs that used GaAs as the barrier material. The introduction of nitrogen into the barriers reduces the spectral blue shift caused by post-growth annealing. Long wavelength emission out to 1.405 mum was observed. The devices exhibited threshold current densities as low as 1.5 kA/cm(2), high differential efficiency of 0.67 W/A, and a maximum output power of 350 mW
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:1041-1135
DOI:10.1109/68.998694