Comparison of electrical and reliability characteristics ofdifferent 14 A oxynitride gate dielectrics

A comparison of RTNO, N(2)O and N(2)O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 A is explored. The N(2)O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher...

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Published inIEEE electron device letters Vol. 23; no. 7; pp. 416 - 418
Main Authors Pan, Tung-Ming, Lin, Hsiu-Shan, Chen, Main-Gwo, Liu, Chuan-Hsi, Chang, Yih-Jau
Format Journal Article
LanguageEnglish
Published 01.07.2002
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Summary:A comparison of RTNO, N(2)O and N(2)O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 A is explored. The N(2)O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher mobility and excellent reliability. This film by RPN treatment is thus attractive as the gate dielectric for future ultra-large scale integration (ULSI) devices
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-1
ISSN:0741-3106
DOI:10.1109/LED.2002.1015223