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Describes the design and performance of an 8-GHz MMIC (monolithic microwave integrated circuit) MESFET (metal-semiconductor FET) power limiter. This limiter incorporates a special gate biasing scheme and makes use of appropriate load conditions which reduce the unexpected phase variations experience...

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Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 41; no. 5; pp. 876 - 879
Main Authors Parra, T, Dienot, J, Gayral, M, Pouysegur, M, Sautereau, J, Graffeuil, J
Format Journal Article
LanguageEnglish
Published 01.05.1993
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Summary:Describes the design and performance of an 8-GHz MMIC (monolithic microwave integrated circuit) MESFET (metal-semiconductor FET) power limiter. This limiter incorporates a special gate biasing scheme and makes use of appropriate load conditions which reduce the unexpected phase variations experienced by the signal through the device. Measured performances (phase variations less than 8 over a 22-dB input power range) are found to be in agreement with the theoretical ones obtained from large signal simulations
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-1
ISSN:0018-9480
DOI:10.1109/22.234526