European Conference on Radiation and Its Effects on Components and Systems (RADECS '99), 5th, Fontevraud, France, Sept. 13-17, 1999, Selected Papers

• Published in: IEEE transactions on nuclear science Vol. 47; no. 3
• Main Author: Sharp, Richard, Ed
• Format: Journal Article
• Language: English
• Published: 01.06.2000
• ISSN: 0018-9499

The present volume on nuclear science discusses the space environment, radiation interaction with materials and simulations of effects on components, radiation metrology, irradiation facilities, transient effects, total-dose effects on materials, total-dose effects on transistors and circuits, processes and designs for IC hardening, methods for hardening equipment to radiation, use of standard components, tolerance of optoelectronic components, behavior of optical components under radiation, and laboratory and operational results. Attention is given to a probability model for cumulative solar proton event fluences, SPICE modeling of the transient response of irradiated MOSFETs, improvement of the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon, empirical modeling of proton-induced single-event-upset rates, spatial and spectral oxide trap distributions in power MOSFETs, and new insights into fully depleted SOI transistor response during total-dose irradiation. Other topics addressed include radiation hardening of power MOSFETs using electrical stress, isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs, proton damage in linear and digital optocouplers, and the possibility of regeneration of irradiated optical fibers by photobleaching. (AIAA)