Investigation of InAs/GaAs quantum-dot infrared photodetector with In sub 0.5 Ga sub 0.5P dark current blocking layer

• Published in: Electronics letters Vol. 38; no. 22; pp. 1374 - 1376
• Main Authors: Tidrow, M Z, Jiang, L, Li, S S, Yeh, N-T, Chyi, J-I
• Format: Journal Article
• Language: English
• Published: 24.10.2002
• ISSN: 0013-5194

A novel InAs/GaAs quantum-dot infrared photodetector with an In sub 0.5Ga sub 0.5 P dark current blocking layer for long-wavelength infrared (LWIR) detection has been developed in this work. Very low dark current densities were obtained at V sub b = - 0.5 V (10 sup -10 A/cm sup -2) and V sub b = +0.5 V (10 sup -11 A /cm sup -2) at 77 K. The normal incident responsivity up to 90 K was observed in this device. The background limited performance (BLIP) detectivity (D* sub BLIP) was found to be 3.36 x 10 sup 9 cm-Hz sup 1/2 /W at *l sub p = 12.2 km with a corresponding responsivity of 55 mA/W at V sub b = -1.7 V and T = 77 K.