Interfacial reactions for the non-stoichiometric TiB sub(x)/(100)Si system

• Published in: Journal of materials science Vol. 37; no. 3; pp. 515 - 521
• Main Authors: Lee, Young-Ki, Kim, Jung-Yuel, Lee, You-Kee, Eom, Gi-Seog, Kwon, Young-Kyu, Lee, Min-Sang, Lim, Chul-Min, Kim, Dong-Kun, Jin, Young-Chul, Park, Dong-Koo
• Format: Journal Article
• Language: English
• Published: 01.02.2002
• ISSN: 0022-2461

In order to evaluate the interfacial reactions in the TiB sub(x)/(100)Si system and the thermal stability of non-stoichiometric TiB sub(x) films (0 less than or equal to B/Ti less than or equal to 2.5), TiB sub(x)/Si samples prepared by a co-evaporation process were annealed in vacuum at temperatures between 300 and 1000 degree C. The solid phase reactions were investigated by means of sheet resistance, X-ray diffraction, transmission electron microscopy, X-ray photo-electron spectroscopy, and stress measurement. For TiB sub(x) samples with a ratio of B/Ti greater than or equal to 2.0, an apparent structural change is not observed even after annealing at 1000 degree C for 1 h. For samples with a ratio of B/Ti < 2.0, however, there are two competitive solid phase reactions: The formation of a titanium silicide layer at the interface and the formation of a stoichiometric TiB sub(2) layer at the surface, indicating the salicide (self-aligned silicide) process. The sheet resistance and the film stress in the Ti/Si and TiB sub(x)/Si systems are well explained by the solid phase reactions.