Dielectric properties of TiO sub(2) thin films deposited by a DC magnetron sputtering system

DC magnetron thin films were used to build up metal-oxide-metal (MOM), aluminum-TiO sub(2)-aluminum structures. Aluminum was deposited through thermal vacuum evaporation in a dedicated installation. The electrical polarization effect for the electric capacitance and dielectric loss and the behavior...

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Bibliographic Details
Published inThin solid films Vol. 372; no. 1; pp. 246 - 249
Main Author Stamate, Marius D
Format Journal Article
LanguageEnglish
Published 01.09.2000
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Summary:DC magnetron thin films were used to build up metal-oxide-metal (MOM), aluminum-TiO sub(2)-aluminum structures. Aluminum was deposited through thermal vacuum evaporation in a dedicated installation. The electrical polarization effect for the electric capacitance and dielectric loss and the behavior of dielectric properties of MOM structures with signal frequency and temperature were analyzed. We found that the amorphous TiO sub(2)-based MOM structures have an unusual dependence of dielectric properties on the polarization and signal frequency, in accordance with the higher value of the TiO sub(2) dielectric constant. We observed that near 270 K there is a transition that occurs for the dielectric constant. This transition is consistent with incorporation of water and OH-ions in the film.
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ISSN:0040-6090