Fabrication and electric properties of lapped type of TMR heads for [similar to]50 Gb/in super(2) and beyond

• Published in: IEEE transactions on magnetics Vol. 38; no. 1 I; pp. 72 - 77
• Main Authors: Araki, Satoru, Sato, Kazuki, Kagami, Takeo, Saruki, Syunji, Uesugi, Takumi, Kasahara, Noriaki, Kuwashima, Tetsuya, Ohta, Naoki, Sun, Jijun, Nagai, Kentaro, Li, Shuxiang, Hachisuka, Nozomu, Hatate, Hitoshi, Kagotani, Tsuneo, Takahashi, Norio
• Format: Journal Article
• Language: English
• Published: 01.01.2002
• ISSN: 0018-9464

Tunnel giant magnetoresistance (TMR) heads at [similar to]50 Gb/in super(2) have been fabricated using improved lapping process. Together with writer of 2.0 T pole materials, recording performance has been demonstrated at magnetic write width of 0.28 mu m and magnetic read width of 0.18 mu m. The resistance area product of final wafer data is around 5 Omega times mu m super(2), with lead and contact resistance included, resulting in a final head resistance of around 200 Omega . The output voltage achieved for 1 mA bias current is 42 mV/ mu m, and the isolated pulses are stable. With a discrete preamplifier, the track density as measured by "747 curve" is 94 kTPI at a bit-error rate of 10 super(-4) and the linear density is 508 kBPI, achieving an areal density of 48 Gb/in super(2). The noise analysis reveals that the noises come mainly from media and shot noise.