NEW DIRECTION IN CREATION OF CERAMIC MATERIALS WITH SPECIFIED PHASE COMPOSITION AND STRUCTURE. PT.2. THEORETICAL FOUNDATIONS OF LOW-TEMPERATURE SYNTHESIS OF SiC FROM GELS AND PRACTICAL REALISATION OF THIS PROCESS IN TECHNOLOGY OF CERAMICS AND REFRACTORIES
Results of a thermodynamic study of 108 phase diagrams of the system Si-O2-C, plotted in the coordinates RT ln pO2-T, are presented. Conditions of the gas medium that intensify SiC synthesis are established. According to the phase diagrams, carbide formation can start at 700 K. The presence of a min...
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Published in | Refractories and industrial ceramics Vol. 40; no. 9/10; pp. 433 - 441 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
01.01.1999
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Online Access | Get full text |
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Summary: | Results of a thermodynamic study of 108 phase diagrams of the system Si-O2-C, plotted in the coordinates RT ln pO2-T, are presented. Conditions of the gas medium that intensify SiC synthesis are established. According to the phase diagrams, carbide formation can start at 700 K. The presence of a minimum amount of SiO vapour at a ratio pCO/pCO2 = 9:1 is the most favourable condition for synthesising SiC from silica and carbon. 35 refs. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-1 |
ISSN: | 1083-4877 |