New advanced Cu deposition process with long throw sputtering

• Published in: Hyōmen gijutsu Vol. 49; no. 11; pp. 1185 - 1191
• Main Author: Takakuwa, K
• Format: Journal Article
• Language: Japanese
• Published: 01.11.1998
• ISSN: 0915-1869

In this report the low pressure long throw sputtering (LTS) technology is introduced. This method is used as part of practical stage in the mass production of Cu wiring. At present the MPU is considered to be advanced technology and the main trends are towards issues related to increasing the efficiency, and higher integration of ULSI. Since the fall of 1998 repeatedly the semiconductor makers have been producing latest technologically advanced bias chip (MPU) on which Cu wiring is implemented. At Japan Vacuum Technologies Inc. the original engineering technology of Long Throw Sputtering has been developed which has become an indispensable technology in the metallizing of the ULSI. In this method the target wafer can be larger than conventional wafers while reducing the sputtering discharge voltage by one digit which allow for increase of ratio of propultion sputter particle ratio and to obtain even more detailed miniaturized patterns. The TEM and SEM cross section photographs of LTS-Cu films, CVD+LTS-Cu integration and its process schematics are shown with details.