Mass-separated broad beam ion implantation of 25 keV N exp + in titanium

A very compact arrangement consisting of a broad beam ion source (Kaufman ion source) followed by a newly developed radio-frequency bandpass mass separator, was used to generate a mass-separated broad ion beam with an ion energy of 500 eV. After this a second ion acceleration to 25 keV was carried o...

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Bibliographic Details
Published inSurface & coatings technology Vol. 97; no. 1-3; pp. 259 - 262
Main Authors Schlemm, H, Buchmann, F
Format Journal Article
LanguageEnglish
Published 09.09.1996
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Summary:A very compact arrangement consisting of a broad beam ion source (Kaufman ion source) followed by a newly developed radio-frequency bandpass mass separator, was used to generate a mass-separated broad ion beam with an ion energy of 500 eV. After this a second ion acceleration to 25 keV was carried out at the gap to the substrate, combined with a defined broadening of the diameter of the ion beam. A titanium layer of 300 nm thickness on a silicon substrate was implanted with N exp + at a dose range of 10 exp 15 -5 x 10 exp 17 cm exp -2 . Rutherford backscattering and thermal waves analyses showed the implanted depth profiles.
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ISSN:0257-8972