Growth of hcp Cu on W(100)

• Published in: Surface science Vol. 377-379; pp. 988 - 991
• Main Authors: Wormeester, H, Kiene, M E, Huger, E, Bauer, E
• Format: Journal Article
• Language: English
• Published: 09.09.1996
• ISSN: 0039-6028

Hcp Cu has been grown by epitaxy on the W(100) surface. The epitaxial relationship of the hcp films is determined by RHEED as (1120) (parallel to) (100) and [1100] (parallel to) [011]. The growth of Cu in the hcp structure is attributed to the small energy difference between the hcp and fcc structure and the much smaller misfit of this hcp orientation in the [1100] direction than of any fcc orientation. The RHEED oscillations at 150K show a difference between the period of the even and odd oscillations, that coincides with changes in UPS intensity at selected energies. The electronic structure of the thin film grown at 150 and 300K shows only small differences. At 500K and above, the Cu grows in high and narrow islands.