Rapid thermal and large area processing of Si and FeSi sub(2) films with a line electron beam

The radiation of a line electron beam has been used for the rapid zone heating of thin films deposited on a suitable substrate. This zone heating process shows the ability (i) for rapid and large area zone-melting crystallization of silicon films deposited on graphite substrate leading to a preferen...

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Published inApplied surface science Vol. 65-66; no. 1-4; pp. 525 - 531
Main Authors Pauli, M, Doscher, M, Dahn, G, Muller, J
Format Journal Article
LanguageEnglish
Published 01.01.1993
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Summary:The radiation of a line electron beam has been used for the rapid zone heating of thin films deposited on a suitable substrate. This zone heating process shows the ability (i) for rapid and large area zone-melting crystallization of silicon films deposited on graphite substrate leading to a preferential (111) orientation of the crystallized silicon film and (ii) for the thermal induced hetero-epitaxial grain growth of 1 mu m thick beta -FeSi sub(2) films from the amorphous phase on (111) silicon substrates by a solid state reaction. Both processes show new perspectives of fabricating thin films for photovoltaic use.
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ISSN:0169-4332