Low voltage NVG super(TM): A new high performance 3 V/5 V flash technology for portable computing and telecommunications applications

A new concept for low voltage NOR Virtual Ground (NVG super(TM)) Flash memory with a fast access time is introduced. New array concepts and process technologies are introduced to achieve programming by 5 V sub(pp) and reading at 3 V plus or minus 10% V sub(cc). The array performance is enhanced by s...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 43; no. 9; pp. 1510 - 1516
Main Authors Bergemont, Albert, Chi, Min-Hwa, Haggag, Hosam
Format Journal Article
LanguageEnglish
Published 01.01.1996
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Summary:A new concept for low voltage NOR Virtual Ground (NVG super(TM)) Flash memory with a fast access time is introduced. New array concepts and process technologies are introduced to achieve programming by 5 V sub(pp) and reading at 3 V plus or minus 10% V sub(cc). The array performance is enhanced by segmentation and using extra access transistor for each segment. The control of the erased cell threshold voltage distribution is one of the key issues for the 3 V read operation in low voltage flash. The erase threshold distribution is minimized by Fowler-Nordheim tunneling and hot electron injection self-recovering techniques.
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ISSN:0018-9383