Influence of growth temperature on the photoresponse of low-temperature-grown GaAs:As p-i-n diodes

Diodes with intrinsic layers grown near 250 degrees C exhibit highest photoresponse. Photoresponse decreases gradually as growth temp. is raised above 250 degrees . For growth temps. at or below 200 degrees , drop in photoresponse is observed, along with degradation of crystal quality. Extracted int...

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Bibliographic Details
Published inJournal of electronic materials Vol. 22; no. 12; pp. 1457 - 1459
Main Authors Srinivasan, A, Sadra, K, Campbell, J C, Streetman, B G
Format Journal Article
LanguageEnglish
Published 01.01.1993
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Summary:Diodes with intrinsic layers grown near 250 degrees C exhibit highest photoresponse. Photoresponse decreases gradually as growth temp. is raised above 250 degrees . For growth temps. at or below 200 degrees , drop in photoresponse is observed, along with degradation of crystal quality. Extracted internal Schottky barrier heights are within 0.7-0.8 eV.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0361-5235