The influence of Ar exp + and Xe exp + ion beam incidence angle on the depth resolution in AES

• Published in: Vacuum Vol. 46; no. 1; pp. 53 - 55
• Main Authors: Liday, J, Kliment, V, Vogrincic, P, Tomek, S
• Format: Journal Article
• Language: English
• Published: 01.01.1995
• ISSN: 0042-207X

An experimental study is presented of the influence of the angle of incidence ( delta =0, 5, 20, 35, 65 and 80 deg ) upon the depth resolution, Delta z, of Auger electron spectroscopy (AES) on multilayer Cr/Ni structures sputter-etched by Ar exp + and Xe exp + beams. For given values of angle delta and depth z, significantly lower values of Delta z were achieved with the beams of Xe exp + than with Ar exp + for angles of incidence ranging from 0-65 deg . For delta =80 deg , the values of Delta z were practically identical for both gases. It can be deduced from the measurements that the difference in surface roughness can be a consequence of two processes: different extents of the channelling effect and different ratios of the sputtering rates within the grains of the metals (Cr,Ni) and at the boundaries of grains formed by oxides of the respective metals by the two gases, argon and xenon.