Dielectric properties of Ge-Pb-O thin films obtained by rf sputtering
The sputtering conditions were varied to obtain GePb sub x O sub 2 sub + sub x thin films (0 < or =x < or =1.4). Study of local order by EXAFS showed the deposits were GeO sub 4 tetrahedra linked either by O vertices or through a Pb sup 2 sup + cation. Dielectric properties were determined.
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| Published in | Materials research bulletin Vol. 28; no. 3; pp. 203 - 212 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
01.01.1993
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| Online Access | Get full text |
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| Abstract | The sputtering conditions were varied to obtain GePb sub x O sub 2 sub + sub x thin films (0 < or =x < or =1.4). Study of local order by EXAFS showed the deposits were GeO sub 4 tetrahedra linked either by O vertices or through a Pb sup 2 sup + cation. Dielectric properties were determined. |
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| AbstractList | The sputtering conditions were varied to obtain GePb sub x O sub 2 sub + sub x thin films (0 < or =x < or =1.4). Study of local order by EXAFS showed the deposits were GeO sub 4 tetrahedra linked either by O vertices or through a Pb sup 2 sup + cation. Dielectric properties were determined. |
| Author | Jacquet, M Besse, J P Baud, G Caperaa, C |
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| Snippet | The sputtering conditions were varied to obtain GePb sub x O sub 2 sub + sub x thin films (0 < or =x < or =1.4). Study of local order by EXAFS showed the... |
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| Title | Dielectric properties of Ge-Pb-O thin films obtained by rf sputtering |
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