Dielectric properties of Ge-Pb-O thin films obtained by rf sputtering
The sputtering conditions were varied to obtain GePb sub x O sub 2 sub + sub x thin films (0 < or =x < or =1.4). Study of local order by EXAFS showed the deposits were GeO sub 4 tetrahedra linked either by O vertices or through a Pb sup 2 sup + cation. Dielectric properties were determined.
Saved in:
| Published in | Materials research bulletin Vol. 28; no. 3; pp. 203 - 212 |
|---|---|
| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
01.01.1993
|
| Online Access | Get full text |
Cover
Loading…
| Summary: | The sputtering conditions were varied to obtain GePb sub x O sub 2 sub + sub x thin films (0 < or =x < or =1.4). Study of local order by EXAFS showed the deposits were GeO sub 4 tetrahedra linked either by O vertices or through a Pb sup 2 sup + cation. Dielectric properties were determined. |
|---|---|
| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-1 |
| ISSN: | 0025-5408 |