Determining lattice mismatch or the composition of a single ultrathin GaInAs layer grown on InP

Fundamental physical parameters were calibrated by measuring the absolute value of the blue shift for the spatially uniform fine-structure single GaInAs quantum well grown by digital epitaxy. Accuracy of this method was also verified by XRD from the multiple quantum well structure by two-monolayer t...

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Published inThin solid films Vol. 225; no. 1-2; pp. 82 - 85
Main Authors Ohsawa, Fumiyuki, Fujita, Hiromasa, Obitsu, Toshio, Ikeda, H, Kawanishi, H
Format Journal Article
LanguageEnglish
Published 01.01.1993
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Summary:Fundamental physical parameters were calibrated by measuring the absolute value of the blue shift for the spatially uniform fine-structure single GaInAs quantum well grown by digital epitaxy. Accuracy of this method was also verified by XRD from the multiple quantum well structure by two-monolayer thickness. Max errors in lattice mismatch and composition determined by the method were plus or minus 0.1% and plus or minus 0.01% for a two-monolayer GaInAs single quantum well.
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ISSN:0040-6090