150 m W fundamental-transverse-mode operation of 670 nm window laser diode

Fundamental-transverse-mode high power CW operation over 150 mW has been realized in AlGaInP/GaInP 670 nm window laser diodes. A window structure of Zn-induced-disordered GaInP has been fabricated by solid phase diffusion using ZnO film for the first time. A compressively strained double-quantum-wel...

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Published inIEEE journal of quantum electronics Vol. 29; no. 6; pp. 1874 - 1879
Main Authors Arimoto, Satoshi, Yasuda, Mikako, Shima, Akihiro, Kadoiwa, Kaoru, Kamizato, Takeshi, Wantanabe, Hitoshi, Omura, Etsuji, Aiga, Masao, Ikeda, Kenji, Mitsui, Shigeru
Format Journal Article
LanguageEnglish
Published 01.01.1993
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Summary:Fundamental-transverse-mode high power CW operation over 150 mW has been realized in AlGaInP/GaInP 670 nm window laser diodes. A window structure of Zn-induced-disordered GaInP has been fabricated by solid phase diffusion using ZnO film for the first time. A compressively strained double-quantum-well active layer and an MQB also have been employed for reduction of threshold current. Stable CW operation beyond 1500 h has been observed under 50 mW at 50 degree C. We believe that these results are the best characteristics ever reported in transverse-mode-stabilized visible laser diodes.
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ISSN:0018-9197