TiO sub 2 /SiO sub 2 multilayer insulating films for ELD's [electroluminescent devices]
Films were first deposited on glass substrates coated with ITO conducting film, then Al stripe electrodes were deposited on the dielectric. Breakdown strength decreased with Ti content but a max charge density occurred at 1 nm thickness.
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Published in | Journal of the Electrochemical Society Vol. 139; no. 4; pp. 1204 - 1206 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
01.01.1992
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Online Access | Get full text |
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Summary: | Films were first deposited on glass substrates coated with ITO conducting film, then Al stripe electrodes were deposited on the dielectric. Breakdown strength decreased with Ti content but a max charge density occurred at 1 nm thickness. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-1 |
ISSN: | 0013-4651 |