TiO sub 2 /SiO sub 2 multilayer insulating films for ELD's [electroluminescent devices]

Films were first deposited on glass substrates coated with ITO conducting film, then Al stripe electrodes were deposited on the dielectric. Breakdown strength decreased with Ti content but a max charge density occurred at 1 nm thickness.

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 139; no. 4; pp. 1204 - 1206
Main Authors Nakayama, T, Onisawa, K, Fuyama, M
Format Journal Article
LanguageEnglish
Published 01.01.1992
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Summary:Films were first deposited on glass substrates coated with ITO conducting film, then Al stripe electrodes were deposited on the dielectric. Breakdown strength decreased with Ti content but a max charge density occurred at 1 nm thickness.
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ISSN:0013-4651