Characterization of double-diffused arsenic/phosphorus shallow n super(+)p junctions with TiSi sub(2)

• Published in: Journal of the Electrochemical Society Vol. 139; no. 12; pp. 3648 - 3652
• Main Authors: Eshraghi, S A, Georgiou, G E, Ha, N T, Nakahara, S, Liu, R
• Format: Journal Article
• Language: English
• Published: 01.01.1992
• ISSN: 0013-4651

This paper investigates the fabrication of titanium silicided, As/P shallow junctions. Diodes were characterized electrically and analyzed by secondary ion mass spectroscopy, Rutherford back scattering, and transmission electron microscopy. The effect of silicide formation on the quality of shallow junctions has been studied. We employed rapid thermal annealing to drive the junctions in order to minimize the defect enhanced diffusion of P. The shallowest junctions were made by 2 x 10 super(15) cm super(-2) 50 keV As followed by 5 x 10 super(13) cm super(-2) 25 keV P and activation of the dopants with a 1050 degree C, 10 s rapid thermal annealing (RTA). The junction depth for this case was approximately 1800 A (from TiSi sub(2) surface). Junctions received an additional low temperature furnace annealing after the RTA step to reduce the junction leakage. Diodes showed low leakage < 5 nA/cm super(2) at 5 V reverse bias.