60-GHz power performance of ion-implanted In(x)Ga(1-x)As/GaAs MESFET's

State-of-the-art 60-GHz power performance is reported for ion-implanted InGaAs/GaAs MESFETs with 0.25 x 200-micron gate length. At output power of 100 mW, a power-added efficiency of 15 percent and associated gain of 4.2 dB were obtained and a saturated output power of 121 mW was achieved for the sa...

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Bibliographic Details
Published inIEEE electron device letters Vol. 11; pp. 496 - 498
Main Authors Feng, Milton, Lau, C L, LEPKOWSKI, THOMASR, BRUSENBACK, PAUL, SCHELLENBERG, JAMESM
Format Journal Article
LanguageEnglish
Published 01.11.1990
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Summary:State-of-the-art 60-GHz power performance is reported for ion-implanted InGaAs/GaAs MESFETs with 0.25 x 200-micron gate length. At output power of 100 mW, a power-added efficiency of 15 percent and associated gain of 4.2 dB were obtained and a saturated output power of 121 mW was achieved for the same device. These results are comparable to the best reported millimeter-wave power performance of InGaAs/GaAs pseudomorphic HEMTs. (I.E.)
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0741-3106