A New Method for the Determination of the Oxygen Content of YBa sub 2 Cu sub 3 O sub 7--x Epitaxial Thin Films Uning NIR-Excited FT Raman Spectrometry

FT Raman spectromatry with a Nd-YAG laser (1064 nm) as the exciting light source has been used to study YBa sub 2 Cu sub 3 O sub 7--x epitaxial thin films and ceramics. It is shown that NIR-excited Raman spectrometry can be used to distinguish various levels of O content even in epitaxial thin films...

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Bibliographic Details
Published inSuperconductor science & technology Vol. 4; no. 5; pp. 199 - 202
Main Authors Guttler, B, Sawatzki, J, Richter, W
Format Journal Article
LanguageEnglish
Published 01.05.1991
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Summary:FT Raman spectromatry with a Nd-YAG laser (1064 nm) as the exciting light source has been used to study YBa sub 2 Cu sub 3 O sub 7--x epitaxial thin films and ceramics. It is shown that NIR-excited Raman spectrometry can be used to distinguish various levels of O content even in epitaxial thin films grown parallel to the crystallographic c-axis. A variation of the O content is, in contrast to conventional, Ar-ion laser excited Raman spectra, reflected by the intensity ratio of the A sub g modes near 330 and 500 cm exp --1 , even in the ab plane. Spectra. 14 ref.--AA
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ISSN:0953-2048