Fabrication of Nb/Al-Al sub(2)O sub(3)/Nb junctions with extremely low leakage currents

Nb/Al-Al sub(2)O sub(3)/Nb trilayer films are deposited using DC magnetron sputtering guns in a UHV system which is capable of 5 x 10 super(-10) Torr. SIS junctions as small as 3.2 x 3.2 mu m super(2) are isolated from the trilayer by standard photolithography. The sub-gap leakage current is compare...

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Published inIEEE transactions on magnetics Vol. 25; no. 2; pp. 1247 - 1250
Main Authors Lichtenberger, A W, McClay, C P, Mattauch, R J, Feldman, J J, Pan, S-K, Kerr, A R
Format Journal Article
LanguageEnglish
Published 01.01.1989
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Abstract Nb/Al-Al sub(2)O sub(3)/Nb trilayer films are deposited using DC magnetron sputtering guns in a UHV system which is capable of 5 x 10 super(-10) Torr. SIS junctions as small as 3.2 x 3.2 mu m super(2) are isolated from the trilayer by standard photolithography. The sub-gap leakage current is compared to the predictions of the BCS theory. The specific capacitance is preliminarily measured to be 45 plus or minus 5 fF/ mu m super(2).
AbstractList Nb/Al-Al sub(2)O sub(3)/Nb trilayer films are deposited using DC magnetron sputtering guns in a UHV system which is capable of 5 x 10 super(-10) Torr. SIS junctions as small as 3.2 x 3.2 mu m super(2) are isolated from the trilayer by standard photolithography. The sub-gap leakage current is compared to the predictions of the BCS theory. The specific capacitance is preliminarily measured to be 45 plus or minus 5 fF/ mu m super(2).
Author McClay, C P
Kerr, A R
Lichtenberger, A W
Pan, S-K
Mattauch, R J
Feldman, J J
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