Fabrication of Nb/Al-Al sub(2)O sub(3)/Nb junctions with extremely low leakage currents
Nb/Al-Al sub(2)O sub(3)/Nb trilayer films are deposited using DC magnetron sputtering guns in a UHV system which is capable of 5 x 10 super(-10) Torr. SIS junctions as small as 3.2 x 3.2 mu m super(2) are isolated from the trilayer by standard photolithography. The sub-gap leakage current is compare...
Saved in:
Published in | IEEE transactions on magnetics Vol. 25; no. 2; pp. 1247 - 1250 |
---|---|
Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
01.01.1989
|
Online Access | Get full text |
Cover
Loading…
Summary: | Nb/Al-Al sub(2)O sub(3)/Nb trilayer films are deposited using DC magnetron sputtering guns in a UHV system which is capable of 5 x 10 super(-10) Torr. SIS junctions as small as 3.2 x 3.2 mu m super(2) are isolated from the trilayer by standard photolithography. The sub-gap leakage current is compared to the predictions of the BCS theory. The specific capacitance is preliminarily measured to be 45 plus or minus 5 fF/ mu m super(2). |
---|---|
Bibliography: | SourceType-Scholarly Journals-2 ObjectType-Conference Paper-1 content type line 23 SourceType-Conference Papers & Proceedings-1 ObjectType-Feature-2 ObjectType-Article-3 |
ISSN: | 0018-9464 |