Fabrication of Nb/Al-Al sub(2)O sub(3)/Nb junctions with extremely low leakage currents

Nb/Al-Al sub(2)O sub(3)/Nb trilayer films are deposited using DC magnetron sputtering guns in a UHV system which is capable of 5 x 10 super(-10) Torr. SIS junctions as small as 3.2 x 3.2 mu m super(2) are isolated from the trilayer by standard photolithography. The sub-gap leakage current is compare...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on magnetics Vol. 25; no. 2; pp. 1247 - 1250
Main Authors Lichtenberger, A W, McClay, C P, Mattauch, R J, Feldman, J J, Pan, S-K, Kerr, A R
Format Journal Article
LanguageEnglish
Published 01.01.1989
Online AccessGet full text

Cover

More Information
Summary:Nb/Al-Al sub(2)O sub(3)/Nb trilayer films are deposited using DC magnetron sputtering guns in a UHV system which is capable of 5 x 10 super(-10) Torr. SIS junctions as small as 3.2 x 3.2 mu m super(2) are isolated from the trilayer by standard photolithography. The sub-gap leakage current is compared to the predictions of the BCS theory. The specific capacitance is preliminarily measured to be 45 plus or minus 5 fF/ mu m super(2).
Bibliography:SourceType-Scholarly Journals-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Feature-2
ObjectType-Article-3
ISSN:0018-9464