Design of a quantum well detector for the 8-14 micron wavelength region
The use of quantum well structures for infrared detection in the 8-14 micron range has recently become a practicality. The device is based on infrared absorption between subbands within the conduction band of a GaAs quantum well. In this paper, some elements of the design of these detectors are disc...
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Published in | South African journal of science Vol. 87; pp. 130 - 132 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
01.03.1991
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Online Access | Get full text |
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Summary: | The use of quantum well structures for infrared detection in the 8-14 micron range has recently become a practicality. The device is based on infrared absorption between subbands within the conduction band of a GaAs quantum well. In this paper, some elements of the design of these detectors are discussed, including the effect of well width and AlGaAs barrier height and width on the sensitive wavelength. (Author) |
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Bibliography: | SourceType-Scholarly Journals-2 ObjectType-Conference Paper-1 content type line 23 SourceType-Conference Papers & Proceedings-1 ObjectType-Feature-2 ObjectType-Article-3 |
ISSN: | 0038-2353 |