Propagation of brace 110 brace cleavage cracks in silicon
The wedge technique can introduce and propagate cleavage cracks in Si at 20 degrees C. X-ray topography checks the crystallography and quality of the cracks.
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Published in | Surface science Vol. 186; no. 3; pp. L561 - L567 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.01.1987
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Online Access | Get full text |
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Summary: | The wedge technique can introduce and propagate cleavage cracks in Si at 20 degrees C. X-ray topography checks the crystallography and quality of the cracks. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-1 |
ISSN: | 0039-6028 |