Propagation of brace 110 brace cleavage cracks in silicon

The wedge technique can introduce and propagate cleavage cracks in Si at 20 degrees C. X-ray topography checks the crystallography and quality of the cracks.

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Bibliographic Details
Published inSurface science Vol. 186; no. 3; pp. L561 - L567
Main Author Michot, G
Format Journal Article
LanguageEnglish
Published 01.01.1987
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Summary:The wedge technique can introduce and propagate cleavage cracks in Si at 20 degrees C. X-ray topography checks the crystallography and quality of the cracks.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0039-6028