Performance prediction of an ultra broad-band voltage-controlled attenuator using Schottky contact coplanar line properties

The performance of Schottky contact coplanar lines used as voltage-variable attenuators is discussed and demonstrated with a first realization on F.E.T. epitaxy. It is shown that the use of lower doped epitaxies offers more interesting characteristics. Then, an attenuator is proposed, the theoretica...

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Bibliographic Details
Published inIEEE electron device letters Vol. EDL-7; no. 2; pp. 132 - 133
Main Authors Seguinot, C, Kennis, P, Pribetich, P, Legier, J F
Format Journal Article
LanguageEnglish
Published 01.01.1986
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Summary:The performance of Schottky contact coplanar lines used as voltage-variable attenuators is discussed and demonstrated with a first realization on F.E.T. epitaxy. It is shown that the use of lower doped epitaxies offers more interesting characteristics. Then, an attenuator is proposed, the theoretical performances of which are: broad-band capability, low loss for ON state, low S.W.R.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-1
ISSN:0741-3106