Negative Photoelectric Effects in p-TlGaSe sub 2

Studies of photoelectrical properties of p-TlGaSe sub 2 crystals at high injection levels are reported. Two phenomena have been recorded and investigated, namely the negative photoconductivity and the negative remanent photoconductivity. The current--voltage, time, spectral, lux, and temperature dep...

Full description

Saved in:
Bibliographic Details
Published inMaterials chemistry and physics Vol. 8; no. 3; pp. 279 - 287
Main Authors Abdullaeva, S G, Aliev, V A
Format Journal Article
LanguageEnglish
Published 01.03.1983
Online AccessGet full text

Cover

More Information
Summary:Studies of photoelectrical properties of p-TlGaSe sub 2 crystals at high injection levels are reported. Two phenomena have been recorded and investigated, namely the negative photoconductivity and the negative remanent photoconductivity. The current--voltage, time, spectral, lux, and temperature dependences of the above phenomena have been studied and the mechanisms of these phenomena are suggested. The microprobe studies conducted have established the presence of selenium inclusions in the form of 200 mu m long cylinders with butt-end diameters from 3 to 10 mu m. The effect of these inclusions on the photoelectrical properties of TlGaSe sub 2 is shown. 14 ref.--AA
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-1
ISSN:0254-0584