Growth and characterization of lattice-matched epitaxial films of Ga sub x In sub (1 minus x) As/InP by liquid-phase epitaxy

The conditions for successful lattice-matched growth by LPE near T = 600 degrees C of Ga sub x In sub (1 minus x) As on less than 111B greaterb than InP substrates are described. The results of the growth of both lattice-matched and intentionally lattice-mismatched epitaxial layers (0.4 less than x...

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Published inJournal of applied physics Vol. 48; no. 10; pp. 4407 - 4409
Main Authors Pearsall, Thomas P, Hopson, R W
Format Journal Article
LanguageEnglish
Published 01.01.1977
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Summary:The conditions for successful lattice-matched growth by LPE near T = 600 degrees C of Ga sub x In sub (1 minus x) As on less than 111B greaterb than InP substrates are described. The results of the growth of both lattice-matched and intentionally lattice-mismatched epitaxial layers (0.4 less than x less than 0.7) are used to calculate the phase diagram. The phase diagram gives the correct liquidus temp., plus or minus 1 degrees C. and the correct solid composition (plus or minus 5% of the nominal composition) for the entire range of growth solutions considered.
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ISSN:0021-8979