Photoluminescence study of the nitrogen content effect on GaAs/GaAs sub(1) sub(-) sub(x)N sub(x)/GaAs/AlGaAs: (Si) quantum well

• Published in: Materials Science and Engineering C: Biomimetic and Supramolecular Systems Vol. 28; no. 5-6; pp. 816 - 819
• Main Authors: Hamdouni, A, Bousbih, F, Ben bouzid, S, Aloulou, S, Harmand, J C, Chtourou, R
• Format: Journal Article
• Language: English
• Published: 01.07.2008
• ISSN: 0928-4931
• DOI: 10.1016/j.msec.2007.10.026

We study the effect of nitrogen content in modulation-doped GaAs /GaAs sub(1) sub(-) sub(x)N sub(x)/GaAs/GaAlAs:(Si) quantum well using low-temperature photoluminescence spectroscopy. The samples were grown on GaAs (001) substrates by molecular-beam epitaxy with different nitrogen compositions. The variation of the nitrogen composition from 0.04% to 0.32% associated to the bi-dimensional electron gas gives a new interaction mode between the nitrogen localized states and the GaAs sub(1) sub(-) sub(x)N sub(x)/GaAs energies levels. The red-shift observed in photoluminescence spectra as function of nitrogen content has been interpreted in the frame of the band anticrossing model.