The surface of TiO sub(2) gate of 2DEG-FET in contact with electrolytes for bio sensing use

In order to apply two-dimensional electron-gas-field-effect-transistors (2DEG-FETs) for cell-viability sensors, we investigated the chemical/electrical properties of TiO sub(2) thin films (13-17nm) prepared with the sol-gel technique on the gate surface of AlGaAs/GaAs 2DEG-FETs. Photochemical/electr...

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Published inApplied surface science Vol. 254; no. 1; pp. 36 - 39
Main Authors Ozasa, K, Nemoto, S, Lee, Y, Mochitate, K, Hara, M, Maeda, M
Format Journal Article
LanguageEnglish
Published 31.10.2007
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Summary:In order to apply two-dimensional electron-gas-field-effect-transistors (2DEG-FETs) for cell-viability sensors, we investigated the chemical/electrical properties of TiO sub(2) thin films (13-17nm) prepared with the sol-gel technique on the gate surface of AlGaAs/GaAs 2DEG-FETs. Photochemical/electrochemical reactions on GaAs surface in electrolytes, which induce the degradation of 2DEG-FET performance, are effectively suppressed by introducing a TiO sub(2) thin film on the gate area of 2DEG-FETs. Compared to conventional ion-selective FETs (ISFETs), the TiO sub(2)/2DEG-FETs in this study exhibit a high sensitivity (410mV/mM) for H sub(2)O sub(2) detection. TiO sub(2) surfaces show better biocompatibility than GaAs surfaces as demonstrated by direct cell culture on these surfaces.
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ISSN:0169-4332
DOI:10.1016/j.apsusc.2007.07.072