Tailoring the 4H-SiC/SiO sub(2) MOS-interface for SiC-based power switches

• Published in: Japanese Journal of Applied Physics Vol. 55; no. 8; p. 08PC04
• Main Authors: Mikhaylov, Aleksey I, Afanasyev, Alexey V, Luchinin, Victor V, Reshanov, Sergey A, Schoner, Adolf, Knoll, Lars, Minamisawa, Renato A, Alfieri, Giovanni, Bartolf, Holger
• Format: Journal Article
• Language: English
• Published: 01.08.2016
• Subjects: Channels; Formations; Gates; Guidelines; MOSFETs; Oxides; Switches; Trends

In this paper, we compare the performance of lateral MOSFETs fabricated with different gate oxide formation processes on p-type epilayers with doping concentration in the range of 1 x 10 super(16) cm super(?3) against Al-implanted p-well doped to 1 x 10 super(18) cm super(?3). An overview of differe...