Tailoring the 4H-SiC/SiO sub(2) MOS-interface for SiC-based power switches

In this paper, we compare the performance of lateral MOSFETs fabricated with different gate oxide formation processes on p-type epilayers with doping concentration in the range of 1 x 10 super(16) cm super(?3) against Al-implanted p-well doped to 1 x 10 super(18) cm super(?3). An overview of differe...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 55; no. 8; p. 08PC04
Main Authors Mikhaylov, Aleksey I, Afanasyev, Alexey V, Luchinin, Victor V, Reshanov, Sergey A, Schoner, Adolf, Knoll, Lars, Minamisawa, Renato A, Alfieri, Giovanni, Bartolf, Holger
Format Journal Article
LanguageEnglish
Published 01.08.2016
Subjects
Channels
Formations
Gates
Guidelines
MOSFETs
Oxides
Switches
Trends
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Summary:In this paper, we compare the performance of lateral MOSFETs fabricated with different gate oxide formation processes on p-type epilayers with doping concentration in the range of 1 x 10 super(16) cm super(?3) against Al-implanted p-well doped to 1 x 10 super(18) cm super(?3). An overview of different technological approaches for the enhancement of the channel mobility is provided. The general trends are summarized and concluded and the main guideline for tailoring the gate oxide formation process is discussed.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.08PC04