RELAXATION PHENOMENA IN BI sub( 12)SIO sub( 20) SINGLE CRYSTAL

Charge transfer in Bi sub( 12)SiO sub( 20) structures is investigated. Electric current dependences on time at temperature of 300 K in the dc electric field strength of the 2.10 super( 5)-10 super( 6) V/m range are measured. Flowing of relaxation polarizing current is shown to result in charge accum...

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Bibliographic Details
Published inSmart nanocomposites Vol. 6; no. 2; p. 149
Main Authors Sevryugina, M P, Pshchelko, N S, Moshnikov, V A
Format Journal Article
LanguageEnglish
Published 01.01.2015
Subjects
Charge transfer
Electric charge
Electric field strength
Nanocomposites
Polarization
Regularity
Surface area
Time measurement
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Summary:Charge transfer in Bi sub( 12)SiO sub( 20) structures is investigated. Electric current dependences on time at temperature of 300 K in the dc electric field strength of the 2.10 super( 5)-10 super( 6) V/m range are measured. Flowing of relaxation polarizing current is shown to result in charge accumulation in the sample surface area. Experimental regularities coordinate with provisions of the relay mechanism of transfer of a charge with the participation of deep local levels.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:1949-4823