Oxygen-deficient GdK sub(2) Nb sub(5) O sub(15) ferroelectric epitaxial thin film

The ferroelectric compound GdK sub(2) Nb sub(5) O sub(15)(GKN) thin film with tetragonal-tungsten-bronze-type structure was grown by pulsed-laser deposition on (001)SrRuO sub(3)/La sub(0.5) Sr sub(0.5) CoO sub(3)/MgO substrate. Using X-ray diffraction analysis we demonstrate that the phase transitio...

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Bibliographic Details
Published inEurophysics letters Vol. 116; no. 6; p. 67001
Main Authors Allouche, B, Gagou, Y, Le Marrec, F, Fremy, M-A, El Marssi, M
Format Journal Article
LanguageEnglish
Published 01.12.2016
Subjects
Ferroelectric materials
Ferroelectricity
Magnesium oxide
Pulsed laser deposition
Switching
Temperature effects
Thin films
X ray diffraction
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Summary:The ferroelectric compound GdK sub(2) Nb sub(5) O sub(15)(GKN) thin film with tetragonal-tungsten-bronze-type structure was grown by pulsed-laser deposition on (001)SrRuO sub(3)/La sub(0.5) Sr sub(0.5) CoO sub(3)/MgO substrate. Using X-ray diffraction analysis we demonstrate that the phase transition temperature in the GKN thin film was shifted to high temperatures due to substrate-induced stress. Impedance spectroscopy investigations show Maxwell-Wagner-type conduction at low frequencies, which leads to resistive switching. Oxygen vacancies and temperature effects were studied to highlight the stability of the resistive switching behavior in the GKN thin film.
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ISSN:0295-5075
1286-4854
DOI:10.1209/0295-5075/116/67001